Fabrication of Schottky Barrier Detectors on Thin Films of PbSSe.
Abstract
Thin layers of lead chalcogenide have been grown on single crystal barium fluoride substrates using a modified hot wall system. Experience gained by other workers 1,2 using this type of system has been useful in determining the parameters used to grow low carrier density films in our system. However, since the systems are not identical, some differences in film properties have been noted and will be discussed in the body of the report. Films have been grown and characterized using Hall measurements to determine the mobility and carrier density. The films, as grown, are activated by exposing the surface to lead chloride which is necessary to obtain good Schottky Barrier devices. Lead contacts have been evaporated onto the surface of the layers to form the Schottky Barriers and also good contacts to form the ohmic contacts. Subsequently the contacts are connected to platinum wires using silver epoxy. After mounting onto a copper holder such that the radiation is incident on the barium fluoride surface, the devices are characterized electrically and optically.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1982
- Accession Number
- ADA134310
Entities
People
- William Rolls