Electron Spectroscopy Study of SiC,

Abstract

A silicon carbide single crystal has been studied using X-ray photoelectron spectroscopy and X-ray and electron excited Auger spectroscopy. A procedure for producing an atomically clean SiC crystal surface has been perfected. The SiC exhibits prominent bulk plasmon loss features associated with Si and C photoelectrons. This loss, at 22.5 eV, agress well with optical data establishing the bulk plasmon energy. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1983
Accession Number
ADA134352

Entities

People

  • Ferenc Bozso
  • J. T. Yates Jr.
  • Lucia Muehlhoff
  • Michael Trenary
  • Wolfgang J. Wolfgang J. Choyke

Organizations

  • University of Pittsburgh

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Chemistry
  • Crystals
  • Electron Spectroscopy
  • Electrons
  • Elements
  • Kinetic Energy
  • Low Angles
  • Measurement
  • Photoelectrons
  • Radiation
  • Silicon
  • Silicon Carbide
  • Single Crystals
  • Spectra
  • Spectroscopy
  • X Ray Photoelectron Spectroscopy
  • X Rays

Fields of Study

  • Physics

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene