Silicon Millimeter Wave Devices by MBE (Molecular Beam Epitaxy).
Abstract
This 15-month program investigated the fabrication of millimeter wave silicon avalanche diode wafers using the growth process of molecular beam epitaxy (MBE). It was the objective of this effort to apply MBE's exacting depth control and arbitrary dopant deposition capabilities to achieve near-ideal IMPATT profiles. As such, the goal of this effort was directed at achieving good doping level control with sharp, well-defined layer transitions and very thin layer thicknesses for the 100 GHz frequency region. A number of silicon wafers grown during the course of this effort with diode fabrication and electrical testing being accomplished at two industrial laboratories who have extensive millimeter wave IMPATT experience. Early wafer growths and subsequent diode fabrication/testing indicated that although the thickness and doping levels achieved were about right, all of the p-n junctions were far too leaky in reverse bias, and they exhibited soft and often too low of breakdown voltages. In addition, it was found that silicon MBE often etched much more rapidly than bulk silicon and sometimes revealed a milky film. These properties have been previously experienced in non-MBE materials and were attributed to possible high dislocation densities or polycrystalline films.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1983
- Accession Number
- ADA134419
Entities
People
- Frederick G. Allen
Organizations
- University of California, Los Angeles