Ion Implanted GaAs I.C. Process Technology

Abstract

This report covers the third quarter of a GaAs (gallium arsenide) integrated circuit (IC) program. The purpose is to develop an ion implanted planar process technology for GaAs ICs with the goal of developing LSI (large scale integration) capability in a short period of time. The fabrication approach is based on multiple localized implantations directly into the semi- insulating GaAs substrate to form device areas insulated by the unimplanted regions of the substrate. A new circuit concept involving a combination of Schottky diodes and depletion mode Schottky barrier FETs (field effect transistors) is being employed to form logic gates capable of high speed and very low power operation.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1978
Accession Number
ADA134911

Entities

People

  • B. M. Welch
  • F. H. Eisen
  • R. D. Fairman
  • R. Eden
  • R. Zucca

Tags

DTIC Thesaurus Topics

  • Circuits
  • Computers
  • Contractors
  • Contracts
  • Crystal Growth
  • Electrons
  • Fabrication
  • Field Effect Transistors
  • Integrated Circuits
  • Ion Implantation
  • Logic Gates
  • Materials
  • Materials Science
  • Measurement
  • Photolithography
  • Semiconductors
  • Standards

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics