GaAs FET Logic at Low Temperatures.

Abstract

This report covers progress made to investigate thee speed advantage associated with the operation of GaAs integrated circuits at low temperatures (77 K). The work was carried out in conjunction with a TI internally-funded program to develop a viable, room-temperature, high-speed GaAs logic technology. In Section II, material development is discussed. Process development and circuit development are discussed in Sections III and IV, respectively. The principal results of this investigation, the temperature characteristics of GaAs MESFET devices and circuits, are described in Section V.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1983
Accession Number
ADA135007

Entities

People

  • F. H. Doerbeck
  • M. R. Namordi
  • W. A. White

Organizations

  • Texas Instruments

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Databases
  • Electronic Components
  • Electronics
  • Electronics Laboratories
  • Electrons
  • Engineering
  • Failure Mode And Effect Analysis
  • Field Effect Transistors
  • Frequency
  • Integrated Circuits
  • Life Tests
  • Logic Gates
  • Metal-Semiconductor Junctions
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics

Fields of Study

  • Materials science

Readers

  • Business Analytics
  • Integrated Circuit Design and Technology.