Optimum Design of Millimeter-Wave Impatt Diode Oscillators.

Abstract

The limitations and control of pulsed IMPATT diode millimeter-wavelength oscillators are described. A quasi-static oscillator model is established for characterizing amplitude and frequency behavior during pulsed operation in response to external influences such as bias current, temperature, optical injection, locking signal injection and RF circuit. The effect of these external parameters in oscillator turn-on, turn-off, frequency chirp during the pulse, and start-up jitter are given for a millimeter-wavelength oscillator using a Si double-drift diode. Methods of controlling the pulsed behavior including bias current compensation, optical compensation and injection locking are analyzed and applied to a pulsed millimeter-wave oscillator example. The optimum bias current and optical current waveforms which eliminate post turn-on frequency drift are presented. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1983
Accession Number
ADA135335

Entities

People

  • Yongyun Hwang

Organizations

  • University of Michigan

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Avalanche Diodes
  • Capacitance
  • Coefficients
  • Current Density
  • Electronics Laboratories
  • Equations
  • Equivalent Circuits
  • Impatt Diodes
  • Millimeter Waves
  • Oscillators
  • Probability Distributions
  • Radar
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics
  • Thermal Resistance
  • Waveforms

Fields of Study

  • Physics

Readers

  • Electrical Engineering
  • Electronics Engineering

Technology Areas

  • 5G