Studies of Silicon Refractory Metal Interfaces: Photoemission Study of Interface Formation and Compound Nucleation.

Abstract

Examined are the electronic and morphological interactions which occur at the interface between silicon and a variety of metals, including Cr, Ti, Sm, Au, and Ca. These interface studies were supported by extensive synchrotron radiation photoemission studies of bulk silicides, including Ti2Si5, TiSi2, VSi2, NbSi2, CrSi2, MoSi2, TaSi2, FeSi2, CoSi2, Ni2Si, NiSi, NiSi2, and Pd2Si and by calculations of the density of states of silicides. Identified are the important parameters in the formation of the metal-silicon bond. Demonstrated is the systematic development of the Si-metal p-d hybridization and the reduction of the Si sp3 bond.

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Document Details

Document Type
Technical Report
Publication Date
Sep 08, 1983
Accession Number
ADA135340

Entities

People

  • J. H. Weaver

Organizations

  • University of Wisconsin–Madison

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Bonds
  • Chemical Reactions
  • Crystal Structure
  • Electrons
  • Energy Bands
  • Films
  • Materials
  • Materials Science
  • Metals
  • Photoelectric Emission
  • Radiation
  • Semiconductors
  • Spectra
  • Synchrotron Radiation
  • Thin Films
  • Transition Metals
  • Valence Bands

Readers

  • Materials Science and Engineering.
  • Powder metallurgy of Titanium alloys.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene