Heterojunction Solid-State Devices for Millimeter-Wave Sources.

Abstract

The use of compound semiconductor and heterojunction devices as millimeter-wave sources through 100 GHz has been investigated. Both IMPATT and MESFET type devices have been considered. A series of comprehensive and accurate theoretical device models have been developed and utilized in this investigation. Both equilibrium and nonequilibrium transport effects have been investigated. Prototype IMPATT device structures have been fabricated in GaAs and GaInAs/InP. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1983
Accession Number
ADA135389

Entities

People

  • R. J. Trew

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bandwidth
  • Compound Semiconductors
  • Crystal Lattice Vibrations
  • Electrical Engineering
  • Electronics Laboratories
  • Fermi Levels
  • Field Effect Transistors
  • Integrated Circuits
  • Microwave Integrated Circuits
  • Military Research
  • Modules (Electronics)
  • Monte Carlo Method
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Transistor Amplifiers
  • Transistors

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Semiconductor Device Technology

Technology Areas

  • 5G
  • 5G - Internet of Things
  • Microelectronics