Tunneling through Amorphous Silicon Barriers.
Abstract
Substantial evidence has been accumulated during the course of this program which indicates that the localized states which are present in nonhydrogenated sputtered amorphous silicon barriers contribute to the larger current density observed at biases below the superconducting energy gap of the electrodes. The basic observations and the method of measuring the density of localized states at the Fermi level of the barrier materials are presented in the Appendix which is a reprint of a paper presented at the 1982 Superconductivity Conference (1). More recent observations and theoretical speculations are included in this report.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1983
- Accession Number
- ADA135866
Entities
People
- D. W. Jillie
- H. Kroger
- J. B. Thaxter
- L. N. Smith
Organizations
- Sperry Corporation