Development of High Purity InP Crystals.

Abstract

Large diameter, 1 kg in weight, high purity polycrystalline and (100) oriented InP single crystals can be routinely prepared, with background carrier concentrations of 2-4x10 to the 15th power/cc and room temperature mobilities in excess of 4000 sq cm/v-sec. The large diameter (Approx. 3 in.), (100) oriented undoped single crystals have unusually low dislocation densities. Sulfur doped crystals are practically dislocation free.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1983
Accession Number
ADA135937

Entities

People

  • G. A. Antypas

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Carrier Mobility
  • Crucibles
  • Crystal Growth
  • Crystals
  • Diameters
  • Dislocations
  • Electrical Properties
  • High Pressure
  • Materials
  • Measurement
  • Military Research
  • Mobility
  • Moisture Content
  • Polycrystals
  • Shaped Charges
  • Single Crystals
  • Test And Evaluation

Readers

  • Mathematics or Statistics
  • Semiconductor Device Technology