Investigation of Metallic Impurities Introduced into SiO2

Abstract

This report contains the theoretical development of a model that describes the diffusion of interstitial diffusors in Si02. Experimental data supporting this model and the implications and conclusions predicted by this model are presented. In summary this model concludes that Pd, Au, Ta, W, Pt, Ti, and Al are potential candidates for use in VLSI gate metalization schemes, where as Ag, Cu, Na, Ni, Mn, Fe, Mg, and Ga are unsuitable.

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Document Details

Document Type
Technical Report
Publication Date
Sep 30, 1983
Accession Number
ADA136008

Entities

People

  • R. M. Swanson
  • T. W. Sigmon

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Boltzmann Equation
  • Charged Particles
  • Chemical Compounds
  • Chemistry
  • Crystal Lattices
  • Crystal Structure
  • Diffusion Coefficient
  • Electric Fields
  • Equations
  • Gas Laws
  • Heat Of Activation
  • Heat Of Formation
  • Ideal Gas Law
  • Materials
  • Oxide Films
  • Oxides
  • Silicon Dioxide

Readers

  • Integrated Circuit Design and Technology.
  • Materials Science and Engineering.
  • Optical Physics and Photonics.