Fundamental Radiation Damage Processes in Silicon.
Abstract
This program has been aimed at detemining and understanding the fundamental properties of simple lattice point defects in semiconductors. The specific purpose has been to determine the electronic properties of the defects, to understand the mechanisms by which they are formed or incorporated into the lattice, and to probe the processes by which they can migrate through the lattice and react with other defects to form complexes. The major emphasis has centered on silicon. As the simplest and best understood semiconductor, silicon provides the best hope of clean, unambiguous and generally applicable answers to these questions.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 25, 1983
- Accession Number
- ADA136033
Entities
Organizations
- Lehigh University