Impurity and Defect Characterization in Epitaxial GaAs, InP and the Ternary and Quaternary Compound Semiconductors.

Abstract

The splitting of the spin doublet of the 1s 2p (m=+1) transition of the hydrogen-like silicon donor in n-GaAs has been observed as a function of applied magnetic field at low temperature. The splitting of the spin doublet increased with increasing magnetic field intensity. The dependence of the splitting on magnetic field intensity was not only larger than linear but was also larger than quadratic dependence in agreement with theory.

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Document Details

Document Type
Technical Report
Publication Date
Nov 02, 1982
Accession Number
ADA136095

Entities

People

  • K. J. Button
  • M. N. Afsar

Organizations

  • Massachusetts Institute of Technology

Tags

DTIC Thesaurus Topics

  • Accuracy
  • Air Force
  • Air Force Facilities
  • Chemical Compounds
  • Compound Semiconductors
  • Cyclotron Resonance
  • Electronics Laboratories
  • Hydrogen
  • Intensity
  • Low Temperature
  • Magnetic Fields
  • Materials
  • Security
  • Semiconductor Physics
  • Semiconductors
  • Standards
  • Transitions

Fields of Study

  • Materials science
  • Physics

Readers

  • Molecular Photonics/Laser Physics
  • Semiconductor Device Technology
  • Superconducting Magnet Technology

Technology Areas

  • Microelectronics