Ion Beam Assisted Deposition of SiO2.
Abstract
A Kaufman ion source was modified to produce a low energy (30 eV) high current density (3 mA/sq cm) 0(+) and 02(+) (0(+)/2(+)) ion beam at an optical surface being coated with Si02. Films of Si02 were deposited with 0(+)/02(+) ion bombardment at low energy (30 eV) and at high energy (500 eV). Application of the ion-assist technique has the following features: (1) Durable coatings can be produced at low substrate temperature; (2) Film stoichiometry is improved, particularly for low energy bombardment; (3) Hydrogen content of the film is reduced under certain conditions of bombardment; and (4) Stress and structure of Si02 films are not greatly affected by ion bombardment. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1983
- Accession Number
- ADA136247
Entities
People
- J. R. Mcneil
Organizations
- University of New Mexico