Electrical Transport in Low Resistivity Amorphous Alloys
Abstract
Diffraction model calculations incorporating appropriate scattering matrix elements and phonon ineffectiveness effects (saturation effects) yield results which are consistent with the observed temperature dependence of the electrical resistivity in low resistivity (Rho < or = 100 micro ohms/cm) amorphous alloys. In particular, remarkably good quantitative agreement with available detailed resistivity measurements in a-MgZn alloys has been obtained by these methods. The results further indicate that saturation effects, which dominate the temperature dependence of the high resistivity amorphous metals, are important even for resistivities as low as 50 micro ohms/cm.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1983
- Accession Number
- ADA136331
Entities
People
- Lawrence V. Meisel
- Paul J. Cote
Organizations
- United States Army Armament Research, Development and Engineering Center