Wideband Monolithic Microwave Amplifier Study.

Abstract

Work is continued on the analysis and design of GaAs FET distributed amplifiers. Design tradeoffs are established for type of device, number of devices, gain, impedance level and line cutoff frequency. The procedure for achieving the maximum gain-bandwidth product is detailed. Preliminary work on a broadband 0-360 degrees phase shifter is reported. The design of an integral part of the phase shifter, a distributed paraphase amplifier from 2 - 20 GHz, is presented. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1983
Accession Number
ADA136424

Entities

People

  • G. K. Hohenwarter
  • J. B. Beyer
  • J. E. Nordman
  • R. C. Becker
  • S. N. Prasad

Organizations

  • University of Wisconsin–Madison

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplifiers
  • Bandwidth
  • Broadband
  • Circuit Analysis
  • Computer Simulations
  • Distributed Amplifiers
  • Engineering
  • Field Effect Transistors
  • Frequency
  • Frequency Response
  • Impedance
  • Microwave Amplifiers
  • Phase Shift
  • Phase Velocity
  • Semiconductors
  • Simulations
  • Transmission Lines

Readers

  • Electronics Engineering
  • Microwave Engineering.