GaAs Gigabit Monolithic Optoelectronic Transmitter.

Abstract

The objective of this program was to develop the Technologies required to monolithically integrate a high performance AlGaAs laser diode with high speed digital GaAs circuitry. This objective was met with the demonstration of a fully integrated optoelectronic transmitter consisting of a Transverse junction stripe (TJS) laser diode, a power driver transistor, and a 4:1 multiplexer. This demonstration is the first major step in the development of high speed optical interconnects for future digital systems operating a gigabit second data rates.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1983
Accession Number
ADA136894

Entities

People

  • J. K. Carney

Organizations

  • Honeywell International, Inc.

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Ceramic Materials
  • Chemical Vapor Deposition
  • Crystal Growth
  • Crystals
  • Detectors
  • Electronics Laboratories
  • Epitaxial Growth
  • Fabrication
  • Field Effect Transistors
  • Laser Diodes
  • Liquid Phase Epitaxy
  • Materials
  • Metal-Semiconductor Junctions
  • Optical Detectors
  • Power Electronics
  • Semiconductor Lasers
  • Semiconductors

Fields of Study

  • Physics

Readers

  • Microwave Engineering.
  • Naval Mine Countermeasure Systems Development.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Microelectronics