Growth of HgCdTe by Modified Molecular Beam Epitaxy
Abstract
Laser assisted deposition was applied successfully to thin film growth of three materials: HgCdTe, CdTe and ZnO. For HgCdTe, congruent evaporation was induced by pulsed laser irradiation. Epitaxial Hg0.7Cd0.3Te layers up to 15 micrometers thick were grown on (111) CdTe substrates at 120 C in .0001 Torr of Hg backpressure from a single evaporation source. Materials were characterized structurally and electrically. The as-grown layers were n- type. After 410 C annealing, they were converted to p-type. n+/p implanted photodiodes were demonstrated. Very high quality (111) CdTe/(100) GaAs heteroepitaxy was demonstrated. The growth rate was as high as 12 micrometers/ hr. The layers were characterized with x-ray, photoluminescence, UV reflectance and transmission electron microscopy and found to have very high crystalline quality. Zn0 films were grown on a large variety of substrates using a pulsed C02 laser. The substrate temperature were only 250 C, the films were highly oriented and uniform. They were also piezoelectric. Surface and acoustic wave transducers were demonstrated. Coupling coefficient superscript 2 was found to be 0.005.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1983
- Accession Number
- ADA137243
Entities
People
- H. Sankur
- J. T. Cheung