Studies of III-V Compound Semiconductors for Optical and Microwave Applications.

Abstract

Compound semiconductors of GaAs and (GaAl) As were studies for optical and microwave applications. Two growth processes were employed for device fabrication: (1) the liquid-phase epitaxy (LPE) and (2) the molecular beam epitaxy (MBE). The procedure for LPE growth was well established in the laboratory. On the other hand, the MBE growth process required a considerable amount of effort to establish the growth procedure and optimize the growth conditions. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 02, 1984
Accession Number
ADA137849

Entities

People

  • Shuo Wang

Organizations

  • University of California, Berkeley

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Electrical Engineering
  • Electronics
  • Electronics Laboratories
  • Fiber-Optic Communications
  • Heterojunctions
  • Integrated Circuits
  • Integrated Optics
  • Laser Arrays
  • Liquid Phase Epitaxy
  • Microwave Integrated Circuits
  • Power Electronics
  • Pulse Compression
  • Quantum Wells
  • Semiconductor Devices
  • Semiconductor Lasers
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics