A Microstrip Time Delay Circuit on Barium Tetratitanate.
Abstract
A microstrip time delay circuit, variable from 1/2 to 8 nsec in 1/2 nsec increments at a 3 GHz operation frequency with a 10% bandwidth is presented. The temperature stable, miniature circuit is designed for a 50 x 50 x 2 mm substrate of barium tetratitanate, BaTi409. A PIN diode switching control circuit was fabricated for user selection of the delay time provided by the four-bit loaded switched-line circuit. PIN diodes, chip capacitors, and wound inductors were characterized for this S-Band frequency range. Several different methods and attempts to adhere a conductor to the barium tetratitanate substrate were made and are presented here, however the complete time delay circuit was never fabricated. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1983
- Accession Number
- ADA138026
Entities
People
- D. A. Hahn
Organizations
- Air Force Institute of Technology