GaAs/GaAlAs Bipolar Heterojunction Gate Array

Abstract

Several technological issues related to the development of GaAs bipolar heterojunction gate arrays were investigated experimentally using a test bar design tht consists of discrete transistors, three types of HI2L gates, and a prototype gate array with 114 internal gates and 25 I/O buffers. The preparation of submicrometer epitaxial films composed of AlGaAS and GaAs layers required for this development were also examined. Two methods of growing epitaxial films, OMCVD and MBE, were evaluated. It was concluded that although MBE is a slow process it is superior to OMCVD in providing uniform epitaxial films with controlled doping concentrations over large area wafers.

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Document Details

Document Type
Technical Report
Publication Date
Sep 09, 1983
Accession Number
ADA138203

Entities

People

  • B. W. Cheney
  • F. H. Doerbeck
  • H. T. Yuan
  • W. V. Mclevige

Organizations

  • Texas Instruments

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Circuits
  • Electronics Laboratories
  • Energy Bands
  • Epitaxial Growth
  • Fabrication
  • Frequency
  • Heterojunction Bipolar Transistors
  • Logic Gates
  • Materials
  • Materials Science
  • Measurement
  • Metal-Semiconductor Junctions
  • Metallic Compounds
  • Power Supplies
  • Semiconductors
  • Transistors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology