Calculations of Misfit Dislocation and Dangling Bond Densities in Abrupt Hg sub (1-x) Cd sub x Te Heterojunctions.

Abstract

Based on the classical theory of epitaxial crystal growth, the misfit dislocations and dangling bond densities of abrupt (111) Hg sub (1-x) Cd sub x Te heterojunctions have been calculated. For the case where (x sub 1-x sub 2) greater than 0.1 the dangling bond density is on the order of 10 to the 11th power/sq. cm. Such large dangling bond densities may produce high interface recombination velocities or band-bending at the interface. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Dec 15, 1983
Accession Number
ADA138241

Entities

People

  • R. B. Schoolar

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Chemistry
  • Corporations
  • Detectors
  • Dislocations
  • Electronics Laboratories
  • Energy Bands
  • Energy Gaps
  • Epitaxial Growth
  • Heterojunctions
  • High Density
  • Infrared Detectors
  • P-N Junctions
  • Quantum Efficiency
  • Semiconductors
  • Substrates
  • Thermal Expansion

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  • Semiconductor Device Technology