Producible Alternative to CdTe for Epitaxy (PACE-2) of LWIR HgCdTe
Abstract
This report covers the progress made toward the achievement of device quality LWIR HgCdTe on an alternate substrate. Epitaxial layers of CdTe have been grown on GaAs, Si and Ge substrates by LADA, MBE and OM-VPE. The bulk-like qualities have been found for CdTe grown on GaAs and Si. Layers of CdTe on Si lack spatial uniformity due to an extended and difficult nucleation cycle. CdTe layers grown by OM-VPE on GaAs and Ge substrates show a higher defect density than those grown by MBE or LADA. LPE HgCdTe layer growth on CdTe/GaAs, CdTe/Si and CdTe/Ge substrates resulted in chemical attack of the base substrate. Epitaxial layers of HgCdTe on these same substrates were achieved by an isothermal VPE growth technique.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1984
- Accession Number
- ADA138255
Entities
People
- E. R. Gertner