Chemical Deposition of SiO2 on InP.
Abstract
Chemical deposition experiments were performed to determine how surface preparation and film deposition conditions influence insulator-semiconductor interface composition and chemical structure. Silicon dioxide layers were chemically deposited on indium phosphide by hydrolyzing silicon orthopropoxide. On unoxidized, etched surfaces, coverage was always patchy. On InP with approximately one monolayer of chemisorbed oxygen in a hydrated-phosphate-like environment, a continuous, approx. 60-A-thick SiO2 film was formed at room temperature. Sio2 attached to the substrate through about one monolayer of Si-O-P bonds. Heating to 50 C during hydrolysis resulted in a mixed Si-In-P oxide, owing to simultaneous hydrolysis and oxidation processes. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 12, 1983
- Accession Number
- ADA138355
Entities
People
- P. A. Bertrand
- P. D. Fleischauer
Organizations
- The Aerospace Corporation