Electrical, Chemical, and Microstructural Characterization of Gettering Mechanisms for VLSI (Very Large Scale Integrated Circuits).

Abstract

An investigation was made of a number of tettering techniques particularly important for VLSI processing. These techniques have included back surface gettering, intrinsic gettering, and HCl oxidation. The general approach of the investigation was to concentrate on the fundamental mechanisms involved with each of the gettering techniques, looking not only at the electrical implications of the technique, but also be the chemical and microstructural properties.

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Document Details

Document Type
Technical Report
Publication Date
Jan 31, 1984
Accession Number
ADA138662

Entities

People

  • J. R. Stach

Organizations

  • Pennsylvania State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemistry
  • Chlorine
  • Creep
  • Diffusion
  • Electrical Engineering
  • Electron Microscopy
  • Gettering
  • Impurities
  • Integrated Circuits
  • Large Scale Integrated Circuits
  • Mass Spectrometry
  • Military Research
  • Oxidation
  • Oxides
  • Point Defects
  • Spectrometry
  • Spectroscopy

Fields of Study

  • Engineering

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology