Study of the Electronic Surface States of 3-5 Compounds and Silicon
Abstract
The work performed over the four year span of this contract comprises a large body of research. Its results are summarized in this document. The technical problem was to study the electronic and atomic structure of the surfaces of several semiconductors. The III-V compound semiconductors, especially GaAs, InP, and GaSb, and the column IV semiconductor Si were emphasized, but some work on GE and HgCdTe was also performed. The predominant methodology used was laboratory experimentation: photoemission spectroscopy excited by synchrotron radiation was utilized heavily, along with angle-resolved photoemission, photoemission excited by conventional ultraviolet and x-ray illumination, low energy electron diffraction, Auger electron spectroscopy, contact potential difference (Kelvin probe) measurements, as well as other techniques which are detailed in the publications.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1982
- Accession Number
- ADA138917
Entities
People
- I. Lindau
- William E. Spicer
Organizations
- Stanford University