A Program of Research on Microfabrication Techniques for VLSI Magnetic Devices.
Abstract
New materials, new means of fabrication, and new device structures for high density magnetic bubble devices are being pursued. A large portion of the research is directed at ion implanted contiguous disk devices which offer sixteen times the bit density of permalloy devices now being sold by U.S. OEM manufacturers. The effects on ion implantation on garnet are being studied with the goal of developing improved garnet materials and fabrication techniques for submicrometer bubble size devices. The behavior of charged walls which act to propagate the bubble domains in these devices is being investigated and correlated with the ion implantation, mask pattern design, and device performance. Unique work with transmission electron microscopy in ion implanted garnets has enabled us to directly observe structural changes produced by ion implantation in patterned devices. During the past year 0.5 micrometer bubbles were propagated in ion implanted contiguous disk devices. Work is being carried out on current-access perforated-sheet technology which offers four times the bit density of presently manufactured devices and order of magnitude higher data rate. During the past year bubble logic gates were demonstrated in this technology. Finally a current-access ion-implanted device structure which offers the high density of field-access contiguous-disk technology and the high performance of current-access technology is being pursued.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 30, 1982
- Accession Number
- ADA138919
Entities
People
- C. S. Krafft
- D. A. Saunders
- M. Alex
- M. H. Kryder
- Sung Min Jo
Organizations
- Carnegie Mellon University