Low-Cost GaAs Solar Cell Development.
Abstract
An abbreviated program to design and develop a thin, low-cost GaAs solar cell for space applications is described. Due to funding limitations, the scheduled four-year program was terminated at the two-year point. Several growth runs utilizing the metal organic-chemical vapor phase (MO-CVD) epitaxial process were made in an attempt to optimize the solar cell structure. Both p/n and n/p growths were made with varying emitter thickness and doping levels. Cell thinning for selected cells was successful to less than 10 microns using a special stop-etch technique. These cells were covered prior to thinning to provide strength and reduce the probability of breakage. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1983
- Accession Number
- ADA138938
Entities
People
- M. J. Ludowise