Interface Properties of Lattice-Matched InGaAsP/InP Heterojunctions.

Abstract

The growth of InGaAsP and InGaAs by liquid phase epitaxy (LPE) on InP substrates has been investigated to obtain the optimum crystal growth parameters to produce high quality epitaxial layers. The lattice mismatch of these layers with respect to the underlying InP substrate was determined by X-ray diffraction, and the energy gap was obtained by optical spectrophotometer transmission measurements. The distribution coefficients for the growth of lattice matched InGaAsP in the 1.15 to 1.31 micron spectral region were determined. The surface morphology of the epitaxial layers was found. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1981
Accession Number
ADA138966

Entities

People

  • G. E. Stillman
  • M. M. Tashima

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Band Gaps
  • Compound Semiconductors
  • Crystal Growth
  • Crystal Lattices
  • Crystals
  • Detection
  • Detectors
  • Diffraction
  • Electrical Engineering
  • Epitaxial Growth
  • Fluids
  • Geometry
  • Liquid Phase Epitaxy
  • Liquid Phases
  • Measurement
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology