An Experimental Estimate of the Electron-Tunneling Distance for Some Outer-Sphere Electrochemical Reactions.

Abstract

Estimates of the reaction zone thickness over which electron tunneling can effectively occur for the outer-sphere electrochemical reduction of some Cr(III) complexes are obtained by comparing the observed work-corrected rate constants with unimolecular rate constants for the electroreduction of structurally similar surface-bound Cr(III) reactants. Effective reaction zone thicknesses of ca. 0.1-0.3 A and ca. 5 A are obtained for outer-sphere electron transfer with Cr(III) reactants containing predominantly aquo or ammine ligands, respectively. This indicates that the former reactions are marginally nonadiabatic whereas the latter are decidedly adiabatic at their respective places of closest approach. These findings are compatible with the greater reactant-electrode separation distances previously noted for Cr(III) aquo relative to ammine complexes resulting from the more extensive hydration sheath surrounding the former reactants. Comparisons with recent calculations performed for some outer-sphere homogeneous reactions suggest that efficient tunneling takes place over roughly comparable distances at metal-electrolyte interfaces and in bulk solution. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1983
Accession Number
ADA139049

Entities

People

  • Joseph T. Hupp
  • Michael J. Weaver

Organizations

  • Purdue University

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Chemistry
  • Coefficients
  • Electrochemical Kinetics
  • Electrochemical Reactions
  • Electrodes
  • Electron Transfer
  • Electrons
  • Experimental Data
  • Frequency
  • Metals
  • Military Research
  • Physical Chemistry
  • Precursors
  • Quantum Tunneling
  • Thickness
  • Transitions
  • Tunneling

Fields of Study

  • Chemistry

Readers

  • Electrochemical Surface Science
  • Mathematics or Statistics
  • Plasma Physics / Magnetohydrodynamics

Technology Areas

  • Microelectronics