Fundamental Studies of Growth, Doping and Transformation in Beta Silicon Carbide.

Abstract

Semiconductor quality beta-SiC thin films are currently being grown for future microelectric applications using CVD techniques. Research in this period has included initial ion implantation studies coupled with annealing and ion microprobe analyses of the resulting implant profiles. An indepth study of the converted layer formed by the reaction of C2H4 with the Si substrate is also included in this report. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Aug 31, 1983
Accession Number
ADA139179

Entities

People

  • Robert F Davis

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Ceramic Materials
  • Charge Carriers
  • Chemical Synthesis
  • Chemical Vapor Deposition
  • Chemistry
  • High Temperature
  • Ion Implantation
  • Mass Spectrometry
  • Materials
  • Materials Engineering
  • Materials Science
  • Measurement
  • Scattering
  • Semiconductors
  • Silicon Carbide
  • Spectra
  • Thin Films

Readers

  • Systems Analysis and Design
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene