Ion Implanted GaAs I.C. Process Technology
Abstract
This report covers the first quarter, Phase II of a program on ion implanted planar GaAs integrated circuit technology. The overall objective of this program is the development of a manufacturable process for high-speed low- power GaAs logic circuits. The goal for Phase I was to establish the technology, and demonstrate its viability by fabricating circuits reaching MSI complexity. The goal for Phase II is to achieve the capability of fabricating GaAs ICs of LSI complexity. The program involves the Rockwell International Science Center and three subcontractors; Crystal Specialties Inc., California Institute of Technology and Cornell University. The most important result obtained in this quarter is the verification of proper operation of an 8-channel multiplexer. This multiplexer, employing 64 gates, is the most complex GaAs IC built to date. The first multiplexer results show operation at moderate speed, 254 MHz clock rate with low power dissipation, 80 mW, for the entire circuit. Testing of wafers which are expected to demonstrate operation at higher speed is in progress.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1979
- Accession Number
- ADA139348
Entities
People
- B. M. Welch
- D. R. Chen
- F. H. Eisen
- R. C. Eden
- R. Zucca