LSI/VLSI (Large Scale Integration/Very Large Scale Integration) Ion Implanted GaAs (Gallium Arsenide) IC Processing. Appendix B. Two-Dimensional Modeling of GaAs MESFET Devices for Integrated High-Speed Logic Circuits.

Abstract

This report summarizes the research carried out at North Carolina State University in support of the Rockwell International Program on 'LSI-VLSI Ion Implanted Planar GaAs IC Processing. The major thrust of the program at NCSU was to develop accurate computer models for analyzing the performance of short- channel GaAs MESFET devices as used in the Rockwell VLSI circuits. The modeling research is divided into three parts: (1) Two-dimensional finite difference simulation, (2) Two-dimensional Monte Carlo analysis, and (3) Analytical modeling. The intent was to use the two-dimensional analyses to give exact solutions to the device operation and to serve as a guide for developing a simpler, and less expensive, analytical model of sufficient accuracy to be valuable as a design aid and to study effects of parameter changes.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1984
Accession Number
ADA139678

Entities

People

  • C. Kirkpatrick
  • C. P. Lee
  • F. H. Eisen
  • P.M. Asbeck
  • R. R. Zucca

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Boltzmann Equation
  • Compound Semiconductors
  • Computational Science
  • Conduction Bands
  • Electric Fields
  • Electron Density
  • Energy Bands
  • Field Effect Transistors
  • Integrated Circuits
  • Metal-Semiconductor Junctions
  • Monte Carlo Method
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Stratified Fluids
  • Two Dimensional
  • Very Large Scale Integration

Readers

  • Computational Modeling and Simulation
  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics