Undoped Buffer Layer Development.

Abstract

This program focused on the growth and analysis of epitaxial layers using three different techniques which have been successful in producing high purity, high mobility, epilayer material for device applications. These included molecular beam epitaxy (MBE), metalorganic chemical vapor deposition (MOCVD), and vapor phase epitaxy. Application of characterization techniques such as SIMS(Secondary Ion Mas Spectrometry), infrared absorption, photoluminescence, deep level transient spectroscopy, and photoconductivity has allowed progress to be made in understanding the major deep impurity centers in semi-insulating epitaxial GaAs. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1984
Accession Number
ADA139758

Entities

People

  • David J. Miller

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Ceramic Materials
  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Crystal Growth
  • Epitaxial Growth
  • Ion Implantation
  • Mass Spectrometry
  • Materials
  • Measurement
  • Molecular Beam Epitaxy
  • Optical Properties
  • Semiconductors
  • Silicon Carbide
  • Spectra
  • Spectrometry
  • Spectroscopy
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene