Investigation of Charge Coupled Devices for Signal Processing.

Abstract

New constant capacitance voltage transient methods are developed. Traps from ion implantation damage are profiled and characterized. New methods of determination of both majority and minority carrier capture rates at traps in one diode is developed. Two-dimensional numerical analyses with new boundary equations are demonstrated for micron and submicron silicon MOS devices. Dangling bound and hydrogen bonding of interface states and bulk dopant acceptor (boron) traps are experimentally demonstrated. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1984
Accession Number
ADA139820

Entities

People

  • C. T. Sah

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Charge Coupled Devices
  • Computer Programming
  • Computers
  • Electrical Engineering
  • Electronics
  • Electronics Laboratories
  • Emission
  • Equations
  • Ion Implantation
  • Low Temperature
  • Measurement
  • Numerical Analysis
  • Semiconductor Devices
  • Semiconductor Junctions
  • Semiconductors
  • Solid State Electronics
  • Two Dimensional

Readers

  • Semiconductor Device Technology
  • Structural Dynamics.