Microwave, Semiconductor Research - Materials, Devices and Circuits.
Abstract
This program covers the growth and assessment of Gallium Arsenide, and related compounds and alloys, for use in microwave, millimeter, and optical devices. It also covers the processing of the material into devices, and the testing of the devices. Both molecular beam epitaxy (MBE) and organo-metallic vapor phase epitaxy (OMVPE) are used for growth. Materials assessment is included. Short modulation doped heterojunction transistors, as well as ballistic electron vertical FETs and heterojunction bipolar transistors, are covered.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1984
- Accession Number
- ADA140052
Entities
People
- C. L. Tang
- D. W. Woodard
- G. W. Wicks
- J. Ballantyne
- L. F. Eastman
Organizations
- Cornell University College of Engineering