Development and Application of SIMS (Secondary Ion Mass Spectrometry) Characterization Techniques for the Study of Impurities and Impurity Motion in (HgCd)Te and CdTe

Abstract

The broad objectives of this program are (1) to develop quantitative analytical procedures for the application of high performance secondary ion mass spectrometry (SIMS) to the analysis of CdTe and (HgCd)Te for trace element and major constituent characterization, particularly Hg, and (2) to perform materials-directed research in order to better understand the incorporation and redistribution of impurity elements in CdTe and (HgCd)Te.

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1983
Accession Number
ADA140712

Entities

People

  • Charles A. Evans Jr.

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Accuracy
  • Acquisition
  • Auger Electrons
  • Data Acquisition
  • Electrons
  • Equations
  • Impurities
  • Ionization Potentials
  • Mass Spectra
  • Mass Spectrometry
  • Materials
  • Sensitivity
  • Spectra
  • Spectrometry
  • Spectroscopy
  • Standards
  • Uncertainty

Fields of Study

  • Materials science

Readers

  • Computational Modeling and Simulation
  • Semiconductor Device Technology