Studies of Surfaces and Interfaces on III-V Compounds Using UV and Soft X-Ray Excitation.
Abstract
The work performed over the four year span of this contract comprises a large body of research. Its results are summarized in this document. The technical problem was to study the surfaces and interfaces of the III-V compound semiconductors. The semiconductors were selected for their technological as well as fundamental importance. The III-V compound semiconductors, GaAs, InP, and GaSb were emphasized. The predominant methodology used was laboratory experimentation: photoemission spectroscopy excited by synchrotron radiation was utilized heavily, along with angle-resolved photoemission, photoemission excited by conventional ultraviolet and x-ray illumination, low energy electron diffraction, Auger electron spectroscopy, contact potential difference (Kelvin probe) measurements, as well as other techniques which are detailed in the publications.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1982
- Accession Number
- ADA140771
Entities
People
- I. Lindau
- William E. Spicer
Organizations
- Stanford University