Development of Short Gate FET's.
Abstract
Annual results on research for development of short gate FET's is reported. High material purity was obtained on in house liquid phase and vapor phase reactors. Quarter micron metal lines have been fabricated using deep uv lithography. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1983
- Accession Number
- ADA140819
Entities
People
- M. G. Spencer
Organizations
- Howard University