Fundamental Studies of Growth, Doping and Transformation in Beta Silicon Carbide.
Abstract
Electronic quality beta - silicon carbide thin films grown by CVD on Si substrates have been implanted with B(+),AL(+),P(+) and N(+) ions or doped with B(+) and AL(+) during growth. Rapid thermal annealing or resistive heating of the implanted samples up to 1653K for five minutes cause only modest activation of the charge carriers. Oxidation, plasma etching, electrical characterization and preparation for device fabrication have also been conducted. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 15, 1984
- Accession Number
- ADA140924
Entities
People
- H. H. Stadelmaier
- Robert F Davis
Organizations
- North Carolina State University