Semiconductors Investigated by Time Resolved Raman Absorption and Photoluminescence Spectroscopy Using Femtoseond and Picosecond Laser Techniques.
Abstract
We report on the research performed during the period 1982-1983 under the auspices of AFOSR. The research effort follows two directions: (1) laser development: subpicosecond laser, application of anti-resonant cavity to Nd:glass, study of the emerald laser, and study of a new mode-locking dye for shorter pulses. (2) Time-resolved fluorescence and absorption studies of CdCr2Se4, GaAs and Ga(0,5)In(0.5)P with the goal to understand the interaction and kinetics of photogenerated carriers and basic assignments of the valence-conduction band transitions (CdCr2Se4). We have also investigated the dynamics of semi-insulating CdSe. Finally we have continued the research on radiation damage (neutrons and protons) in CdSe and GaAs. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1984
- Accession Number
- ADA141381
Entities
People
- A. G. Doukas
- Robert Alfano
Organizations
- City College of New York