High Resolution Measurements of Impurity-Induced Localized Vibrational Modes in Semiconductors.

Abstract

The recent measurements and study of the carbon-induced localized vibrational mode (LVM) in GaAs have demonstrated that nearest neighbor isotropic frequency shifts can be observed if one uses the high resolution capability of a Fourier transform infrared (FITR) spectrometer. One major importance of such measurements lies in the use of the shifts to determine the impurity site and the formation of complexes such as dimers. This feature has been used in a detailed study of the LVM infrared absorption of Si-doped GaAs. Samples electrically compensated by electron irradiation and by Li saturation were used in the study. Bands due to SiGa, SiAs, SiGa-SiAs, 7LiGa, and SiAs-AsGa (or VGa) were studied in high resolution. In several cases the structures observed in the high resolution measurements were compared with model calculations with generally satisfactory results.

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Document Details

Document Type
Technical Report
Publication Date
Mar 26, 1984
Accession Number
ADA141577

Entities

People

  • W. G. Spitzer

Organizations

  • University of Southern California

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Absorption Spectra
  • Electron Irradiation
  • Energy
  • Frequency
  • Frequency Shift
  • High Resolution
  • Identification
  • Materials
  • Materials Science
  • Measurement
  • Nitrogen
  • Saturation
  • Semiconductors
  • Spectra
  • Spectrometers
  • Universities

Readers

  • Image Processing and Computer Vision.
  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics