Schottky Barrier Photoelectrodes with a Variable Barrier Height.
Abstract
The purpose of this research is to investigate the properties of Schottky barriers formed between semiconductors and ion insertion compounds having continuously and reversibly variable work functions. In Phase I, the diode p-Si/M(x)WO3 (M = H, Li) was studied. Li(x)WO3 thin films, prepared by vacuum evaporation or sputtering, showed work functions spanning the range 4.2-5.2 eV for x = 0 to 0.4. Electrical measurements on solid state diodes employing Li(x)WO3 layers revealed a barrier height modulation of 0.06V for this range, limited by significant Fermi level pinning. Photoelectrochemical measurements of H(x)WO3 coated p-Si electrodes showed that the ion insertion compound enhanced electrode stability and photoresponse in acidic electrolytes. The band bending in naked and coated p-Si electrodes was measured as a function of applied bias using a new technique assessing saturation photovoltage as the electrode is polarized. The slope of these curves, (dVB/dV), is related inversely to the interface state density, Ds. Ds was significantly reduced by the H(x)WO3 overlayer. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1984
- Accession Number
- ADA141813
Entities
People
- D. R. Rogers
- R. D. Rauh