Ballistic Transport in Submicron Silicon Mosfets.

Abstract

Recent improvements in the manufacturing of MOSFETs have reduced the minimum feature size and brought transistors with submicron geometries into being. For certain materials such as GaAs, gate lengths on the order of 0.2 micron are not comparable in length to the mean free path of the electrons in the channel at room temperature. It has been suggested that these electrons could cross the channel without suffering a collision, a phenomenon referred to as ballistic transport. For silicon devices the ballistic transport phenomenon might occur at cryogenic temperatures (4.2K) where decreased scattering results in high low-field mobilities. We characterized submicron silicon MOSFET's down to 4.2K in the subthreshold, linear and saturation regimes. A 500um MOSFET was used as a comparison device. The measurements indicated that the effective channel mobility was inversely proportional to the ambient temperature, longitudinal field and transverse field.

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Document Details

Document Type
Technical Report
Publication Date
Mar 28, 1984
Accession Number
ADA142036

Entities

People

  • D. J. Dumin

Organizations

  • Clemson University

Tags

DTIC Thesaurus Topics

  • Amplifiers
  • Charge Carriers
  • Electric Fields
  • Electron Mobility
  • Electrons
  • Field Effect Transistors
  • Geometry
  • Low Temperature
  • Materials
  • Mean Free Path
  • Measurement
  • Military Research
  • Mobility
  • Scattering
  • Semiconductor Devices
  • Semiconductors
  • Transistors

Readers

  • Integrated Circuit Design and Technology.
  • Materials Science and Engineering.
  • Pulsed Power and Plasma Physics.

Technology Areas

  • Microelectronics