HgCdTe Surface and Defect Study Program.

Abstract

This report presents results of the first six-months period of a three-year study of the surface and defects of HgCdTe. In an investigation of MIS interfaces using Photox Si02 on HgCdTe, effects of the choice of gate metal composition are presented. Contribution to flatband bias, measured by capacitance voltage, of insulator fixed charge is determined. Effect of water on interface electrical and mechanical properties are presented. Studies of the initial stages of oxidation of UHV cleaned HgCdTe using photoemission spectroscopy are presented. The effect of Hg bonding on ease of defect formation is discussed and using TEM, defects in bulk and LPE grown material are surveyed. Detailed calculations of s, p and hybrid (sp3) energies are presented for Hg, Cd, Zn, Te, Se, and S. Bond energies of pure binaries and in the alloy are calculated. Trends are interpreted to show replacement of Cd by Zn stabilizing the alloy.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1983
Accession Number
ADA142342

Entities

People

  • D. Laser
  • J. A. Silberman
  • John A. Wilson
  • Stephen Cole
  • W. E. Spicer

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Structures
  • Chemical Reactions
  • Chemical Synthesis
  • Chemistry
  • Detection
  • Detectors
  • Electrical Properties
  • Electron Microscopes
  • Energy Bands
  • Fabrication
  • Fermi Levels
  • Materials
  • Measurement
  • Mechanical Properties
  • Solid State Physics
  • Surface Chemistry
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics