Large-Signal Characterization of Nonlinear Two-Port Active Networks.

Abstract

The objectives of this investigation include the development of a large-signal characterization procedure for nonlinear active two-port networks, analysis of the large-signal properties of MESFETs, and establishment of a large-signal MESFET equivalent circuit model. An approach for characterizing the single-frequency properties of a nonlinear two-port network is presented. The characterization results are useful in optimizing the external circuits for particular applications such as amplifiers and oscillators. The information obtained regarding network properties can be used for establishing amplifier and oscillator design and stability criteria. A GaAs MESFET was used as the nonlinear active two-port network, and its large-signal characteristics were measured. The nonlinear properties of the MESFET were investigated over the 7- to 13 GHz frequency range. The common drain configuration was studied extensively since this configuration is particularly advantageous for oscillator applications.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1984
Accession Number
ADA142462

Entities

People

  • D. C. Yang

Organizations

  • University of Michigan

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Amplifiers
  • Bipolar Junction Transistors
  • Circuit Analysis
  • Circuits
  • Diagrams
  • Equivalent Circuits
  • Field Effect Transistors
  • Frequency
  • Impedance
  • Measurement
  • Oscillators
  • Physics Laboratories
  • Power Levels
  • Resonant Circuits
  • Semiconductors
  • Test Fixtures

Readers

  • Control Systems Engineering.
  • Semiconductor Device Technology