Study of Mechano-Chemical Machining of Ceramics and the Effect on Thin Film Behavior.
Abstract
Efforts have been made to mechanochemically polish polycrystalline Zr02, Nm-Zn ferrite, MgO, Al2O3, Si3N4, SiC, and B4C. Measurements were made of the removal rates obtained by mechanochemically polishing above materials on a polyurethane impregnated polyester lap using a colloidal silica slurry as a polishing medium. These measurements indicate that the colloidal silica slurry polishes oxide ceramics at significantly higher removal rates than non-oxide ceramics. It is shown that a polishing medium consisting of Cr2O3 can mechanochemically polish non-oxide ceramics at significantly higher removal rates than the colloidal silica slurry. Because of the reactive nature of colloidal silica slurries, they are typically used in conjunction with polyurethane impregnated polyester of polyurethane foam laps. Employment of such non-rigid laps yields polished surfaces with orange-peel appearance (in the case of polycrystalline materials), excessive rounding at the edges and with flatness of no better than 1 lambda (lambda = 633nm) per centimeter in the center. Employing rigid linen phenolic laps, we have been able to get mechanochemically polished surfaces with flatness of approx. lambda/10 per centimeter, a little rounding at the edges and no orange-peel appearance.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1984
- Accession Number
- ADA142542
Entities
People
- Heli Vora
Organizations
- Honeywell International, Inc.