Formation of Silicide Contacts Using Codeposited Refractory Metals Alloy Films.

Abstract

Contact reactions of a Si substrate and thin films of co-deposited two refractory metals have been studied. Three systems have been chosen Ta-V, Ta-W and Ti-V. As reference also two bilayer structures for each system have been studied (e.g. Ta/W/Si and W/Ta/Si for the Ta-W system). In each system the dependence of the interaction with Si on annealing temperature and on alloy composition is investigated. The interdiffusion and silicide formation have been analyzed by Auger electron spectroscopy and X-Ray diffraction. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1984
Accession Number
ADA142879

Entities

People

  • A. Appelbaum
  • M. Eizenberg

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Alloys
  • Auger Electron Spectroscopy
  • Auger Electrons
  • Diffraction
  • Electron Spectroscopy
  • Films
  • Free Energy
  • Heat Treatment
  • High Temperature
  • Phase Diagrams
  • Phase Separation
  • Refractory Metals
  • Solid Solutions
  • Thin Films
  • Titanium
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Powder metallurgy of Titanium alloys.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene