Physical Properties of CdTe Films Grown by Hotwall and Molecular Beam Techniques.

Abstract

Results have shown that MBE and hotwall MBE techniques can be employed to grow high quality epitaxial CdTe films, suitable for use as substrates for Hg CdTe film growth, using alternative substrates. In particular, Cdte / (0001) sapphire and CdTe / (100) GaAs provide viable alternatives to bulk CdTe for use as substrates in the 2-5 micrometer and 8-14 micrometer IR regions, respectively. The most recent results indicate that layers grown by hotwall MBE are at least comparable to and, perhaps, superior to MBE grown films. This is an important finding because it implies that the CdTe epitaxial film growth process on these alternatives substrates may be scaled-up to meet production needs for substrate using batch processing techniques. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1984
Accession Number
ADA143180

Entities

People

  • J. F. Schetzina

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Batch Processing
  • Classification
  • Contracts
  • Electronics
  • Electronics Laboratories
  • Epitaxial Growth
  • Films
  • Materials
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Photoluminescence
  • Physical Properties
  • Sapphire
  • Security
  • Substrates
  • Thin Films
  • Vapor Pressure

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology