Preparation of High Purity Ga(X)In(1-x)As by the VPE-Hydride Method with a Gallium-Indium Alloy Source,
Abstract
The preparation of epitaxial layers of the ternary, GaxIn1-xAs, by the VPE-Hydride technique using a Ga-In alloy source is described. The alloy composition necessary to produce Ga0.47In0.53 As was found to be 12.2 mole percent Ga-87.8 mole percent In at source, mixing, and deposition temperatures of 800, 850, and 700 C, respectively. Maximum growth rates of the order of 0.1 micrometer/min were observed when the source HC1 had a flow rate of 2.3 cc/min. The In content increases slightly with the number of runs using the same alloy. An increase in deposition temperature from 700 to 750 C exhibited no effect on the composition of the GaxIn1-x As layer. The electrical properties of the epitaxial layers obtained compare favorably with other growth methods, n = 2.8 x 10 to the 15th power/cu. cm (300K) and mu = 8852 sq cm/V-sec (300K). The study illustrates that the use of an alloy in the VPE-Hydride technique using a single-barrel reactor is a viable method to grow epitaxial layers of Ga0.47 In0.53As.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1984
- Accession Number
- ADA143275
Entities
People
- K. P. Quinlan
- T. E. Erstfeld
Organizations
- Rome Laboratory